PSMN005-75B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 01 — 16 November 2009
Product data sheet
1. Produ...
PSMN005-75B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 01 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
High frequency computer motherboard DC-to-DC convertors
OR-ing applicationss
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 75 A; VDS = 60 V; Tj = 25 °C; see Figure 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit - - 75 V - - 75 A - - 230 W
- 50 - nC
-
4.3 5
mΩ
Nexperia
PSMN005-75B
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
drain
[1] It is not possible to make connection to pin 2.
3. Ordering information...