PSMN014-40YS

PSMN014-40YS N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Rev. 03 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC convertors „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 5 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 13 Min Typ Max Unit - - 40 V - - 46 A --55 - 56 W 175 °C - - 20 mΩ - 11 14 mΩ Nexperia PSMN014-40YS N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 20 V; see ...