PSMN015-100B

PSMN015-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 — 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Rated for avalanche ruggedness 1.3 Applications „ DC-to-DC convertors „ Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 75 A; VDS = 80 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9 and 10 Min Typ Max Unit - - 100 V - - 75 A - - 300 W - 35 - nC - 12 15 mΩ Nexperia PSMN015-100B N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to drain [1] It is not possible to make a connection to pin 2. Simplified outline [1] mb 2 13 SOT404 (D2PAK) 3. Ordering information ...