PSMN015-110P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 6 October 2009
Product data sheet
1. Produc...
PSMN015-110P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 6 October 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Simple gate drive required due to low gate charge
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference Symbol Parameter VDS drain-source voltage ID drain current
Ptot total power dissipation Dynamic characteristics QGD gate-drain charge
Static characteristics RDSon drain-source on-state
resistance
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3
Tmb = 25 °C; see Figure 2
Min Typ Max Unit - - 110 V - - 75 A
- - 300 W
VGS = 10 V; ID = 75 A; VDS = 80 V; Tj = 25 °C; see Figure 11
- 35 - nC
VGS = 10 V; ID = 25 A;
- 12 15 mΩ
Tj = 25 °C; see Figure 9
and 10
Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to drain
PSMN015-110P
N-channel TrenchMOS SiliconMAX standard level FET
Simplified outline
mb
Graphic symbol
D
G mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering...