PSMN015-60BS

PSMN015-60BS N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 50 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped Min Typ Max Unit - - 60 V - - 50 A - - 86 W -55 - 175 °C - - 23.7 mΩ - 12.6 14.8 mΩ - 4.7 - nC - 20.9 - nC - - 44 mJ Nexperia PSMN015-60BS N-channel 60 V 14.8 mΩ standard level MOSFE...