PSMN017-30EL

PSMN017-30EL N-channel 30 V 17 mΩ logic level MOSFET in I2PAK Rev. 2 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for logic level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Min [1] - Ptot total power dissipation Tj junction temperature Static characteristics Tmb = 25 °C; see Figure 2 -55 RDSon drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 13 - VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 - Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness VGS = 4.5 V; ID = 10 A; VDS = 15 V; see Figure 14; see Figure 15 - EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 32 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped - [1] Continuous current is limited by package. Typ Max Unit - 30 V - 32 A - 47 W - 175 °C 18.7 23.4 mΩ 13.4 17 mΩ 1.94 5.1 - nC nC - 13 mJ Nexperia PSMN017-30EL ...