N-channel MOSFET
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
Rev. 3 — 27 September 2011
Product data sheet
1. Pr...
Description
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
Rev. 3 — 27 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC converters Load switching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol VDS ID
Parameter drain-source voltage drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Ptot total power dissipation Tj junction temperature Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state resistance
Dynamic characteristics
VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13
QGD QG(tot)
gate-drain charge total gate charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C;
avalanche energy
ID = 50 A; Vsup ≤ 80 V;
RGS = 50 Ω; unclamped
Min Typ Max Unit - - 80 V - - 50 A
--55 -
103 W 175 °C
- 15.2 29 mΩ - 13.7 17 mΩ
- 6 - nC - 26 - nC
- - 55 mJ
Nexperia
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in...
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