N-channel MOSFET
PSMN021-100YL
N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56
4 November 2016
Product data sheet
1. General des...
Description
PSMN021-100YL
N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56
4 November 2016
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
2. Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100 % tested LFPAK provides maximum power density in a Power SO8 package
3. Applications
Synchronous rectification in power supply equipment Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD
gate-drain charge
ID = 15 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit - - 100 V - - 49 A - - 147 W
-
17.4 22
mΩ
- 13.3 - nC
Nexperia
PSMN021-100YL
N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G mb D
g...
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