PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 16 December 2010
Product data sheet
1. Prod...
PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 16 December 2010
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
DC-to-DC converters
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 10 V; ID = 55.5 A; VDS = 120 V; Tj = 25 °C
Min Typ Max Unit - - 150 V - - 55.5 A - - 250 W
- 24 30 mΩ
- 38 50 nC
Nexperia
PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information Symbol Description G gate D drain S source D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
G mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering ...