N-channel MOSFET
PSMN030-60YS
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
Rev. 02 — 25 October 2010
Product data sheet
1. Prod...
Description
PSMN030-60YS
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
Rev. 02 — 25 October 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Ptot total power dissipation Tj junction temperature Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state resistance
Dynamic characteristics
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13
QGD QG(tot)
gate-drain charge total gate charge
VGS = 10 V; ID = 15 A; VDS = 30 V; see Figure 14; see Figure 15
Min Typ Max Unit - - 60 V - - 29 A
--55 -
56 W 175 °C
- - 39.5 mΩ - 19.1 24.7 mΩ
- 3 - nC - 13 - nC
Nexperia
PSMN030-60YS
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
2. Pinning ...
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