PSMN038-100YL

PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive LFPAK56 package is footprint compatible with other Power-SO8 types Qualified to 175 °C 3. Applications DC-to-DC converters Load switch TV power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 5 A; Tj = 175 °C; resistance Fig. 13; Fig. 12 VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QG(tot) total gate charge VGS = 5 V; ID = 5 A; VDS = 80 V; Tj = 25 °C; Fig. 14; Fig. 15 QGD gate-drain charge VGS = 10 V; ID = 5 A; VDS = 80 V; Tj = 25 °C; Fig. 14; Fig. 15 Min Typ Max Unit - - 100 V - - 30 A - - 94.9 W - - 103.5 mΩ - 30.2 37.5 mΩ - 21.6 - nC - 8.3 - nC Nexperia PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drainsource ...