N-channel MOSFET
PSMN039-100YS
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
Rev. 02 — 2 April 2010
Product data sheet
1. Produ...
Description
PSMN039-100YS
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
Rev. 02 — 2 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C; ID = 28.1 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω
QGD QG(tot)
gate-drain charge total gate charge
VGS = 10 V; ID = 15 A; VDS = 50 V; see Figure 14 and 15
Min Typ Max Unit - - 100 V - - 28.1 A
- - 74 W
-55 -
175 °C
- - 42 mJ
- 8 - nC - 23 - nC
Nexperia
PSMN039-100YS
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
Table 1. Quick reference …continued
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