PSMN057-200B

PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 3. Applications DC-to-DC converters Switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C Ptot total power dissipation Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 17 A; Tj = 25 °C resistance Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 39 A; VDS = 160 V; Tj = 25 °C Min Typ Max Unit - - 200 V - - 39 A - - 250 W - 41 57 mΩ - 37 50 nC Nexperia PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate mb 2 D drain 3 S source mb D mounting base; connected to drain 2 13 D2PAK (SOT404) Graphic symbol D G mbb076 S 6. Ordering information Table 3. Ordering information Type number P...