PSMN057-200P

PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC converters „ Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C VGS = 10 V; ID = 17 A; Tj = 25 °C VGS = 10 V; ID = 39 A; VDS = 160 V; Tj = 25 °C Min Typ Max Unit - - 200 V - - 39 A - - 250 W - 41 57 mΩ - 37 50 nC Nexperia PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G gate D drain S source D mounting base; connected to drain Simplified outline mb Graphic symbol D G mbb076 S 3. Ordering information 123 SOT78 (TO-220AB) Table 3. Ordering inform...