PSMN1R0-30YLC

PSMN1R0-30YLC N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology 15 January 2015 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High reliability Power SO8 package, qualified to 175°C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads Ultra low Rdson and low parasitic inductance 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Power OR-ing Server power supplies Sync rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C; resistance Fig. 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 Min Typ Max Unit - - 30 V [1] - - 100 A - - 272 W -55 - 175 °C - 1.1 1.4 mΩ - 0.85 1.15 mΩ Nexperia PSMN1R0-30YLC N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions VGS = 4.5 V...