PSMN1R0-40SSH
N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level
MOSFET in LFPAK88 using NextPowerS3 Technology...
PSMN1R0-40SSH
N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level
MOSFET in LFPAK88 using NextPowerS3 Technology
1 May 2019
Product data sheet
1. General description
325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “
SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated
Schottky or
Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current.
2. Features and benefits
325 Amp continuous current capability LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,
optimum soldering and easy solder-joint inspection Copper-clip and solder die attach for low package inductance and resistance, and high ID (max)
rating Ideal replacement for D2PAK and 10 x 12 mm leadless package types Qualified to 175 °C Meets UL2595 requirements for creepage and clearance Avalanche rated, 100 % tested Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for
low EMI designs Unique “
SchottkyPlus” technology for
Schottky-like switching performance and low IDSS leakage Narrow VGS(th) rating...