PSMN1R0-40YSH
N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in
LFPAK56E using NextPower-S3 Schottky-Plus technology
25 April 2019
Product data sheet
1. General description
290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed a...