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PSMN1R2-30YLC Dataheets PDF



Part Number PSMN1R2-30YLC
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN1R2-30YLC DatasheetPSMN1R2-30YLC Datasheet (PDF)

PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Optimised for 4.5V Gate drive utilising NextPower Super.

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PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Optimised for 4.5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads „ Ultra low Rdson and low parasitic inductance 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Power OR-ing „ Server power supplies „ Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 25 A; resistance Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Min Typ Max Unit - - 30 V [1] - - 100 A --55 - 215 W 175 °C - 1.35 1.65 mΩ - 1.05 1.25 mΩ Nexperia PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 [1] Continuous current is limited by package. 2. Pinning information Min Typ Max Unit - 11.6 - nC - 38 - nC Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S source S source S source G gate D mounting base; connected to drain 3. Ordering information Simplified outline mb 1234 SOT669 (LFPAK; Power-SO8) Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name PSMN1R2-30YLC LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads 4. Marking Version SOT669 Table 4. Marking codes Type number PSMN1R2-30YLC [1] % = placeholder for manufacturing site code Marking code[1] 1C230L PSMN1R2-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 May 2011 © Nexperia B.V. 2017. All rights reserved 2 of 15 Nexperia PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ VGS = 10 V; Tmb = 25 °C; see Figure 1 VGS = 10 V; Tmb = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 Ptot total power dissipation Tstg storage temperature Tj junction temperature Tsld(M) peak soldering temperature VESD electrostatic discharge voltage Source-drain diode Tmb = 25 °C; see Figure 2 MM (JEDEC JESD22-A115) IS source current ISM peak source current Avalanche ruggedness Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped; see Figure 3 [1] Continuous current is limited by package. Min -20 [1] [1] - Max 30 30 20 100 100 1237 Unit V V V A A A - 215 W -55 175 °C -55 175 °C - 260 °C 900 - V [1] - 100 A - 1237 A - 209 mJ PSMN1R2-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 May 2011 © Nexperia B.V. 2017. All rights reserved 3 of 15 Nexperia PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower 360 ID (A) 300 240 180 120 60 0 0 003aaf 553 (1) 50 100 150 200 Tmb ( C) 120 Pder (%) 80 03na19 40 0 0 50 100 150 200 Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature 103 IAL (A) 102 Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aaf 567 (1) 10 (2) 1 10-1 10-3 10-2 10-1 1 10 tAL (ms ) Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time PSMN1R2-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 3 May 2011 © Nexperia B.V. 2017. All rights reserved 4 of 15 Nexperia PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower 104 ID (A) 103 102 10 1 10-1 10-1 Limit RDSon = VDS / ID 1 003aaf554 DC 10 tp =10 μ s 100 μs 1 ms 10 ms 100 ms VDS (V) 102 Fig 4. Safe operating ar.


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