Document
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 1 — 3 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching
Power OR-ing Server power supplies Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol VDS ID
Parameter drain-source voltage drain current
Conditions
25 °C ≤ Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2 Tj junction temperature Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 25 A;
resistance
Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12
Min Typ Max Unit - - 30 V [1] - - 100 A
--55 -
215 W 175 °C
- 1.35 1.65 mΩ
- 1.05 1.25 mΩ
Nexperia
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
QG(tot)
total gate charge
VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit - 11.6 - nC - 38 - nC
Table 2. Pin 1 2 3 4 mb
Pinning information Symbol Description S source S source S source G gate D mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK; Power-SO8)
Graphic symbol
D
G mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN1R2-30YLC
LFPAK; Power-SO8
Description plastic single-ended surface-mounted package; 4 leads
4. Marking
Version SOT669
Table 4. Marking codes Type number PSMN1R2-30YLC
[1] % = placeholder for manufacturing site code
Marking code[1] 1C230L
PSMN1R2-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 May 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15
Nexperia
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID
IDM
Parameter drain-source voltage drain-gate voltage gate-source voltage drain current
peak drain current
Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
VGS = 10 V; Tmb = 25 °C; see Figure 1 VGS = 10 V; Tmb = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2 MM (JEDEC JESD22-A115)
IS source current ISM peak source current Avalanche ruggedness
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped; see Figure 3
[1] Continuous current is limited by package.
Min -20 [1] [1] -
Max 30 30 20 100 100 1237
Unit V V V A A A
- 215 W
-55 175 °C
-55 175 °C
- 260 °C
900 -
V
[1] -
100 A
- 1237 A
- 209 mJ
PSMN1R2-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 May 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15
Nexperia
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
360 ID (A)
300
240
180
120
60
0 0
003aaf 553
(1)
50 100 150 200 Tmb ( C)
120
Pder (%)
80
03na19
40
0 0 50 100 150 200 Tmb (°C)
Fig 1. Continuous drain current as a function of mounting base temperature
103 IAL (A) 102
Fig 2. Normalized total power dissipation as a function of mounting base temperature
003aaf 567
(1)
10 (2)
1
10-1 10-3
10-2
10-1
1 10 tAL (ms )
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
PSMN1R2-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 May 2011
© Nexperia B.V. 2017. All rights reserved
4 of 15
Nexperia
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
104 ID (A)
103
102
10
1
10-1 10-1
Limit RDSon = VDS / ID 1
003aaf554
DC 10
tp =10 μ s 100 μs 1 ms
10 ms 100 ms
VDS (V)
102
Fig 4. Safe operating ar.