PSMN1R7-60BS

PSMN1R7-60BS N-channel 60 V 2 mΩ standard level MOSFET in D2PAK Rev. 2 — 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 13;see Figure 12 VGS = 10 V; ID = 75 A; VDS = 30 V; see Figure 14;see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 60 V; RGS = 50 Ω; Unclamped [1] Continuous current is limited by package. Min Typ Max Unit - - 60 V [1] - - 120 A - - 306 W -55 - 175 °C - 1.66 2 mΩ - 2.66 3.1 mΩ - 32 - nC - 137 - nC - - 913...