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PSMN2R2-25YLC Dataheets PDF



Part Number PSMN2R2-25YLC
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN2R2-25YLC DatasheetPSMN2R2-25YLC Datasheet (PDF)

PSMN2R2-25YLC N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimised fo.

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PSMN2R2-25YLC N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimised for 4.5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Power OR-ing „ Server power supplies „ Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol VDS Parameter drain-source voltage Conditions 25 °C ≤ Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Min Typ Max Unit - - 25 V [1] - - 100 A - - 106 W -55 - 175 °C - 2.6 3.15 mΩ - 2 2.4 mΩ Nexperia PSMN2R2-25YLC N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 15; see Figure 14 [1] Continuous current is limited by package 2. Pinning information Min Typ Max Unit - 5.2 - nC - 18 - nC Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S source S source S source G gate D mounting base; connected to drain 3. Ordering information Simplified outline mb 1234 SOT669 (LFPAK; Power-SO8) Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name PSMN2R2-25YLC LFPAK; Power-SO8 4. Marking Description Version plastic single-ended surface-mounted package; 4 leads SOT669 Table 4. Marking codes Type number PSMN2R2-25YLC [1] % = placeholder for manufacturing site code. Marking code[1] 2C225L PSMN2R2-25YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 © Nexperia B.V. 2017. All rights reserved 2 of 15 Nexperia PSMN2R2-25YLC N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ VGS = 10 V; Tmb = 25 °C; see Figure 1 VGS = 10 V; Tmb = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 Ptot total power dissipation Tstg storage temperature Tj junction temperature Tsld(M) peak soldering temperature VESD electrostatic discharge voltage Source-drain diode Tmb = 25 °C; see Figure 2 MM (JEDEC JESD22-A115) IS source current ISM peak source current Avalanche ruggedness Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 25 V; unclamped; RGS = 50 Ω; see Figure 3 [1] Continuous current is limited by package. Min -20 [1] [1] - Max Unit 25 V 25 V 20 V 100 A 100 A 636 A - 106 W -55 175 °C -55 175 °C - 260 °C 430 - V - 96 A - 636 A - 60 mJ PSMN2R2-25YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 © Nexperia B.V. 2017. All rights reserved 3 of 15 Nexperia PSMN2R2-25YLC N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower 180 ID (A) 150 120 90 60 30 0 0 003aaf707 (1) 50 100 150 200 Tmb(°C) 120 Pder (%) 80 03na19 40 0 0 50 100 150 200 Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature 103 IAL (A) 102 10 Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aaf 721 (1) (2) 1 10-1 10-3 10-2 10-1 1 10 tAL (ms ) Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time PSMN2R2-25YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 May 2011 © Nexperia B.V. 2017. All rights reserved 4 of 15 Nexperia PSMN2R2-25YLC N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower 104 ID (A) 103 102 10 1 10-1 10-1 Limit RDSon = VDS / ID DC 1 003aaf708 tp =10 μ s 100 μs 1 ms 10 ms 100 ms 10 VDS (V) 102 Fig 4. Safe operating area; continuous an.


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