PSMN2R2-30YLC

PSMN2R2-30YLC N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 02 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimised for 4.5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Power OR-ing „ Server power supplies „ Sync rectifier 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min Typ Max Unit - - 30 V [1] - - 100 A --55 - 141 W 175 °C VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 - 2.3 2.8 mΩ - 1.8 2.15 mΩ Nexperia PSMN2R2-30YLC N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristic...