N-channel MOSFET
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
Rev. 1 — 20 March 2012
Product data sheet
1. Produ...
Description
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
Rev. 1 — 20 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC convertors Load switching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID
Quick reference data Parameter drain-source voltage drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
[1]
VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 6 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 6; see Figure 13
VGS = 10 V; ID = 25 A; VDS = 20 V; see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω
Min -55
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-
-
[1] Continuous current is limited by package
Typ Max Unit - 40 V - 100 A
- 306 W - 175 °C
2.73 3.2 1.88 2.2
mΩ mΩ
25 130 -
nC nC
- 1.24 J
Nexperia
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