PSMN2R6-60PS

PSMN2R6-60PS N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 5 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust construction for demanding applications Standard level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 11 Dynamic characteristics QG(tot) QGD total gate charge gate-drain charge ID = 25 A; VDS = 48 V; VGS = 10 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. Min Typ Max Unit - - 60 V [1] - - 150 A - - 326 W - 1.97 2.6 mΩ - 140 - nC - 43.7 - nC Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source PSMN2R6-60PS N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 Simplified outline mb Graphic symbol D G mbb076 S 123 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package...