PSMN3R3-60PL

PSMN3R3-60PL N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 7 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 11 Dynamic characteristics QG(tot) QGD total gate charge gate-drain charge VGS = 10 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] [1] Continuous current is limited by package. Min Typ Max Unit - - 60 V - - 130 A - - 293 W - 2.7 3.4 mΩ - 175 - nC - 31 - nC - - 372 mJ Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source PSMN3R3-60PL N-channel 60 V, 3.4 mΩ logic level MOSFET in...