PSMN4R0-25YLC

PSMN4R0-25YLC N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK Rev. 01 — 2 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising Superjunction technology  Ultra low QG, QGD & QOSS for high system efficiencies at low and high loads 1.3 Applications  DC-to-DC converters  Load switching  Power OR-ing  Server power supplies  Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 Min Typ Max Unit - - 25 V - - 84 A - - 61 W -55 - 175 °C - 4.5 5.8 mΩ - 3.5 4.5 mΩ Nexperia PSMN4R0-25YLC N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 20 A; VDS 12 V; see Figu...