PSMN4R0-60YS

PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 mΩ standard level FET 14 May 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies Telecom power 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 15 A; Tj = 100 °C; resistance Fig. 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 13 Min Typ Max Unit - - 60 V [1] - - 100 A - - 130 W -55 - 175 °C - - 8.3 mΩ - 3.6 4 mΩ Nexperia PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 mΩ standard level FET Symbol Parameter Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Conditions VGS = 10 V; ID = 75 A; VDS = 30 V; Fig. 14; Fig. 15 ...