PSMN5R0-100PS

PSMN5R0-100PS N-channel 100 V 5 mΩ standard level MOSFET in TO-220 Rev. 3 — 26 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Min Typ Max Unit - - 100 V [1] - - 120 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 338 W Tj junction temperature -55 - 175 °C Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 - 7.7 9 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 [2] - 4.3 5 mΩ Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 50 V; see Figure 14; see Figure 15 - 49 - nC - 170 - nC Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; drain-source avalanche ID = 120 A; Vsup ≤ 100 V; energy RGS = 50 Ω; Unclamped - - 537 mJ Nexperia PSMN5R0-100PS N-...