PSMN5R6-100BS

PSMN5R6-100BS N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Min [1] - Ptot total power dissipation Tj junction temperature Static characteristics Tmb = 25 °C; see Figure 2 -55 RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 - VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 - Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche Ruggedness VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 14; see Figure 15 - EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped - [1] Continuous current limited by package. Typ Max Unit - 100 V - 100 A - 306 W - 175 °C 8.5 10 4.72 5.6 mΩ mΩ 43 141 - nC nC - 468...