PSMN6R3-120PS

PSMN6R3-120PS N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 7 June 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive TO-220 package can be mounted to heatsink 3. Applications AC-to-DC power supply Synchronous rectification Motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 70 A; Vsup ≤ 120 V; unclamped; RGS = 50 Ω; Fig. 3 Min Typ Max Unit - - 120 V - - 70 A - - 405 W 4 5.7 6.7 mΩ - 61.9 - nC - 207.1 - nC - - 532 mJ Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D drain PSMN...