PSMN7R6-60PS

PSMN7R6-60PS N-channel 60 V 7.8 mΩ standard level MOSFET Rev. 03 — 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for standard level gate drive sources 1.3 Applications „ DC-to-DC converters „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 9 VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 15; see Figure 14 VGS = 10 V; Tj(init) = 25 °C; ID = 92 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped Min Typ Max Unit - - 60 V - - 92 A - - 149 W - 5.9 7.8 mΩ - 10.6 - nC - - 110 mJ Nexperia PSMN7R6-60PS N-channel 60 V 7.8 mΩ standard level MOSFET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G gate D drain S source D mounting base; connec...