PSMN8R0-80YL

PSMN8R0-80YL N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56 20 October 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package 3. Applications Synchronous rectification in power supply equipment Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 [1] Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge ID = 25 A; VDS = 64 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package. Min Typ Max Unit - - 80 V - - 100 A - - 238 W - 6.3 8.5 mΩ - 17.1 - nC Nexperia PSMN8R0-80YL N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S sourc...