PSMN8R5-100ES

PSMN8R5-100ES N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.3 Applications AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tj = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 13; Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 Avalanche Ruggedness EDS(AL)S non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 [1] [1] Continious current limited by package. Min Typ Max Unit - - 100 V - - 100 A - - 263 W - 6.4 8.5 mΩ - 33 - nC - 111 - nC - - 219 mJ Nexperia PSMN8R5-100ES N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK 2. Pinning information Table 2...