PSMN8R5-60YS

PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 22 July 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 15 A; Tj = 100 °C; resistance Fig. 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 13 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 60 A; VDS = 30 V; Fig. 15; Fig. 14 Min Typ Max Unit - - 60 V - - 76 A - - 106 W -55 - 175 °C - - 12.8 mΩ - 5.6 8 mΩ - 7.7 - nC Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET Symbol QG(tot) Parameter total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche...