N-channel MOSFET
PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
Rev. 02 — 1 November 2010
Product data sheet
1. P...
Description
PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
Rev. 02 — 1 November 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters Load switching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol VDS ID
Parameter drain-source voltage drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Ptot total power dissipation Tj junction temperature Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state resistance
Dynamic characteristics
VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13
QGD QG(tot)
gate-drain charge total gate charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C;
drain-source avalanche ID = 90 A; Vsup ≤ 80 V;
energy
RGS = 50 Ω; unclamped
[1] Measured 3 mm from package.
Min Typ Max Unit - - 80 V - - 90 A
--55 -
170 W 175 °C
[1] -
- 14 mΩ 7.5 8.7 mΩ
- 11 - nC - 52 - nC
- - 120 mJ
Nexperia
PSMN8R7-80PS
N-channel 80 V ...
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