PSMN9R5-100BS

PSMN9R5-100BS N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 60 A; VDS = 50 V; see Figure 14;see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 89 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω Min Typ Max Unit - - 100 V - - 89 A - - 211 W -55 - 175 °C - 8.16 9.6 mΩ - 23 - nC - 82 - nC - - 177 mJ Nexperia PSMN9R5-100BS N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 2. Pinning information Table 2. Pin 1 2 3 mb Pinning in...