PSMNR90-30BL

PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13; Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 75 A; VDS = 15 V; Fig. 14; Fig. 15 Min Typ Max Unit - - 30 V [1] - - 120 A - - 306 W -55 - 175 °C - 0.89 1 mΩ - 1.19 1.5 mΩ - 37 - nC - 118 - nC Nexperia PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped [1] Continuous current is l...