2N7002NXBK

2N7002NXBK 60 V, N-channel Trench MOSFET 25 July 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C -- -20 - [1] - - 60 20 270 VGS = 10 V; Tsp = 25 °C - - 330 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance - 2.2 2.8 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. Unit V V mA mA Ω Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2S source 3D drain 2N7002NXBK 60 V, N-channel Trench MOSFET Simplified outline 3 Graphic symbol D 12 SOT23 G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name 2N7002NXBK SOT23 Description Version plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Mark...