Document
BUK6D210-60E
60 V, N-channel Trench MOSFET
17 April 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Extended temperature range Tj = 175 °C • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • Trench MOSFET technology • AEC-Q101 qualified
3. Applications
• LED lighting • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tsp = 25 °C Tsp = 25 °C
VGS = 10 V; ID = 2.1 A; Tj = 25 °C
Min Typ Max Unit
- - 60 V
-20 -
20 V
- - 5.7 A
- - 15 W
- 160 210 mΩ
Nexperia
BUK6D210-60E
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
Graphic symbol
16 7
25
384
Transparent top view
DFN2020MD‑6 (SOT1220)
G
D
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BUK6D210-60E
DFN2020MD‑6 plastic, leadless thermal enhanced ultra thin small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body
Version SOT1220
7. Marking
Table 4. Marking codes Type number BUK6D210-60E
Marking code 5G
BUK6D210-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 April 2019
© Nexperia B.V. 2019. All rights reserved
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Nexperia
BUK6D210-60E
60 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage VGS gate-source voltage ID drain current
IDM peak drain current Ptot total power dissipation
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
ISM peak source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tj = 25 °C
VGS = 10 V; Tsp = 25 °C VGS = 10 V; Tsp = 100 °C VGS = 10 V; Tamb = 25 °C Tsp = 25 °C; single pulse; tp ≤ 10 µs Tsp = 25 °C Tamb = 25 °C
Tsp = 25 °C Tamb = 25 °C single pulse; tp ≤ 10 µs; Tsp = 25 °C
HBM
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
Tj(init) = 25 °C; ID = 0.17 A; DUT in
source avalanche energy avalanche (unclamped)
Min Max Unit
- 60 V
-20 20
V
- 5.7 A
- 4.1 A
[1] -
2.1 A
- 23 A
- 15 W
[1] -
2W
-55 175 °C
-55 175 °C
-65 175 °C
[1] -
-
5.7 A 2A 23 A
[2] -
2000 V
- 5.3 mJ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. [2] Measured between all pins.
120
aaa-026120
120
aaa-026121
Pder (%)
Ider (%)
80 80
40 40
0 -75 25 125 225
Tj (°C)
Fig. 1. Normalized total power dissipation as a function of junction temperature
0 -75 25 125 225
Tj (°C)
Fig. 2. Normalized continuous drain current as a function of junction temperature
BUK6D210-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 April 2019
© Nexperia B.V. 2019. All rights reserved
3 / 15
Nexperia
10 ID (A)
1
Limit RDSon = VDS/ID
BUK6D210-60E
60 V, N-channel Trench MOSFET
tp = 10 µs
aaa-029769
100 µs
DC; Tsp = 25 °C
1 ms
10-1 10 ms
DC; Tamb = 25 °C; 6 cm2
100 ms
10-2 10-1
1
10 102 103 VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
BUK6D210-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 April 2019
© Nexperia B.V. 2019. All rights reserved
4 / 15
Nexperia
BUK6D210-60E
60 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from in free air junction to ambient
Rth(j-sp)
thermal resistance from junction to solder point
Min [1] -
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
10
duty cycle = 1
Zth(j-sp) 0.75 (K/W)
0.33
0.20 1
0.50 0.25 0.10
0.05 0.02
0 0.01
Typ Max Unit 66 76 K/W 5 10 K/W
aaa-029786
10-1 10-5
10-4
tp (s)
10-3
Fig. 4. Transient thermal impedance from junction to solder point as a function of pulse duration; typical values
103 aaa-029787
Zth(j-a) (K/W)
102 duty cycle = 1
0.75
0.33 0.20
0.50 0.10
10 0
0.05 0.02 0.01
0.25
1 10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103 tp (s)
Fig. 5. Transient thermal impedance from junction.