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BUK6D210-60E Dataheets PDF



Part Number BUK6D210-60E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK6D210-60E DatasheetBUK6D210-60E Datasheet (PDF)

BUK6D210-60E 60 V, N-channel Trench MOSFET 17 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • Trench MOSFET technology • AEC-Q101 qu.

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BUK6D210-60E 60 V, N-channel Trench MOSFET 17 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • Trench MOSFET technology • AEC-Q101 qualified 3. Applications • LED lighting • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tsp = 25 °C Tsp = 25 °C VGS = 10 V; ID = 2.1 A; Tj = 25 °C Min Typ Max Unit - - 60 V -20 - 20 V - - 5.7 A - - 15 W - 160 210 mΩ Nexperia BUK6D210-60E 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline Graphic symbol 16 7 25 384 Transparent top view DFN2020MD‑6 (SOT1220) G D S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description BUK6D210-60E DFN2020MD‑6 plastic, leadless thermal enhanced ultra thin small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Version SOT1220 7. Marking Table 4. Marking codes Type number BUK6D210-60E Marking code 5G BUK6D210-60E Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2019 © Nexperia B.V. 2019. All rights reserved 2 / 15 Nexperia BUK6D210-60E 60 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage ID drain current IDM peak drain current Ptot total power dissipation Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current ISM peak source current ESD maximum rating VESD electrostatic discharge voltage Tj = 25 °C VGS = 10 V; Tsp = 25 °C VGS = 10 V; Tsp = 100 °C VGS = 10 V; Tamb = 25 °C Tsp = 25 °C; single pulse; tp ≤ 10 µs Tsp = 25 °C Tamb = 25 °C Tsp = 25 °C Tamb = 25 °C single pulse; tp ≤ 10 µs; Tsp = 25 °C HBM Avalanche ruggedness EDS(AL)S non-repetitive drain- Tj(init) = 25 °C; ID = 0.17 A; DUT in source avalanche energy avalanche (unclamped) Min Max Unit - 60 V -20 20 V - 5.7 A - 4.1 A [1] - 2.1 A - 23 A - 15 W [1] - 2W -55 175 °C -55 175 °C -65 175 °C [1] - - 5.7 A 2A 23 A [2] - 2000 V - 5.3 mJ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. [2] Measured between all pins. 120 aaa-026120 120 aaa-026121 Pder (%) Ider (%) 80 80 40 40 0 -75 25 125 225 Tj (°C) Fig. 1. Normalized total power dissipation as a function of junction temperature 0 -75 25 125 225 Tj (°C) Fig. 2. Normalized continuous drain current as a function of junction temperature BUK6D210-60E Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2019 © Nexperia B.V. 2019. All rights reserved 3 / 15 Nexperia 10 ID (A) 1 Limit RDSon = VDS/ID BUK6D210-60E 60 V, N-channel Trench MOSFET tp = 10 µs aaa-029769 100 µs DC; Tsp = 25 °C 1 ms 10-1 10 ms DC; Tamb = 25 °C; 6 cm2 100 ms 10-2 10-1 1 10 102 103 VDS (V) Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage BUK6D210-60E Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2019 © Nexperia B.V. 2019. All rights reserved 4 / 15 Nexperia BUK6D210-60E 60 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) thermal resistance from junction to solder point Min [1] - - [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. 10 duty cycle = 1 Zth(j-sp) 0.75 (K/W) 0.33 0.20 1 0.50 0.25 0.10 0.05 0.02 0 0.01 Typ Max Unit 66 76 K/W 5 10 K/W aaa-029786 10-1 10-5 10-4 tp (s) 10-3 Fig. 4. Transient thermal impedance from junction to solder point as a function of pulse duration; typical values 103 aaa-029787 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.20 0.50 0.10 10 0 0.05 0.02 0.01 0.25 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm2 1 10 102 103 tp (s) Fig. 5. Transient thermal impedance from junction.


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