BUK6D385-100E
100 V, N-channel Trench MOSFET
29 April 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Extended temperature range Tj = 175 °C Side wettable ...
