NX138BKS
60 V, dual N-channel Trench MOSFET
15 June 2016
Product data sheet
1. General description
Dual N-channel enha...
NX138BKS
60 V, dual N-channel Trench MOSFET
15 June 2016
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect
Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
Per
transistor
VDS drain-source voltage Tj = 25 °C
- - 60
VGS gate-source voltage
-20 -
20
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 210
Static characteristics (per
transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance
- 2.1 3.5
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Unit
V V mA
Ω
Nexperia
NX138BKS
60 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1
Simplified outline
654
Graphic symbol
D1
D2
123
TSSOP6 (SOT363)
G1
G2
S1 S2 017aaa256
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX138BKS
TSSOP6
Description plastic surface-mounted...