NX3008CBKV

NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Level shifter  Power supply converter  Load switch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage ID drain current TR1 (N-channel) Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C -8 [1] - - -30 8 -220 V V mA VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C TR1 (N-channel), Static characteristics -8 [1] - - 30 V 8V 400 mA RDSon drain-source on-state VGS = 4.5 V; ID = 350 mA; resistance Tj = 25 °C - 1 1.4 Ω TR2 (P-channel), Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -200 mA; - 2.8 4.1 Ω resistance Tj = 25 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. Nexperia NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning infor...