NX7002BKM

NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 350 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance - 2.2 2.8 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia NX7002BKM 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol D G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name NX7002BKM DFN1006-3 Description Version DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number ...