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NX7002BKXB Dataheets PDF



Part Number NX7002BKXB
Manufacturers nexperia
Logo nexperia
Description dual N-channel MOSFET
Datasheet NX7002BKXB DatasheetNX7002BKXB Datasheet (PDF)

NX7002BKXB 60 V, dual N-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM .

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NX7002BKXB 60 V, dual N-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tsp = 25 °C - - 330 mA VGS = 10 V; Tamb = 25 °C [1] - - 260 mA Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance - 2.2 2.8 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. Nexperia NX7002BKXB 60 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2 Simplified outline 1 76 25 Graphic symbol D1 G1 8 34 Transparent top view DFN1010B-6 (SOT1216) S1 D2 G2 S2 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name NX7002BKXB DFN1010B-6 Description DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals Version SOT1216 7. Marking Table 4. Marking codes Type number NX7002BKXB MARKING CODE (EXAMPLE) Marking code 00 01 01 READING DIRECTION MARK-FREE AREA PIN 1 INDICATION MARK READING EXAMPLE: 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description NX7002BKXB All information provided in this document is subject to legal disclaimers. Product data sheet 30 June 2015 YEAR DATE CODE © Nexperia B.V. 2017. All rights reserved 2 / 17 Nexperia NX7002BKXB 60 V, dual N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tsp = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Source-drain diode IS source current Per device Tj junction temperature Tamb ambient temperature Tstg storage temperature Tsp = 25 °C Tamb = 25 °C [1] [1] [2] [1] [1] Min Max Unit - 60 V -20 20 V - 330 mA - 260 mA - 170 mA - 0.8 A - 285 mW - 407 mW - 4032 mW - 0.2 A -55 150 °C -5.


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