Document
NX7002BKXB
60 V, dual N-channel Trench MOSFET
30 June 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic-level compatible • Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tsp = 25 °C
- - 330 mA
VGS = 10 V; Tamb = 25 °C
[1] - - 260 mA
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia
NX7002BKXB
60 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2
Simplified outline
1 76 25
Graphic symbol
D1
G1
8 34
Transparent top view
DFN1010B-6 (SOT1216)
S1
D2 G2
S2 017aaa256
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX7002BKXB
DFN1010B-6
Description
DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals
Version SOT1216
7. Marking
Table 4. Marking codes Type number NX7002BKXB
MARKING CODE (EXAMPLE)
Marking code 00 01 01
READING DIRECTION
MARK-FREE AREA
PIN 1 INDICATION MARK
READING EXAMPLE:
11 01 10 aaa-007665
Fig. 1. DFN1010B-6 (SOT1216) binary marking code description
NX7002BKXB
All information provided in this document is subject to legal disclaimers.
Product data sheet
30 June 2015
YEAR DATE CODE
© Nexperia B.V. 2017. All rights reserved
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Nexperia
NX7002BKXB
60 V, dual N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tsp = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Source-drain diode
IS source current
Per device
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Tsp = 25 °C Tamb = 25 °C
[1] [1]
[2] [1]
[1]
Min Max Unit
- 60 V
-20 20
V
- 330 mA
- 260 mA
- 170 mA
- 0.8 A
- 285 mW - 407 mW
- 4032 mW
- 0.2 A
-55 150 °C -5.