PMCM4401UPE

PMCM4401UPE 20 V, P-channel Trench MOSFET 7 October 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.78 × 0.78 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -3 A; Tj = 25 °C Min Typ Max - - -20 -8 - 8 [1] - - -4 - 75 95 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Unit V V A mΩ Nexperia PMCM4401UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description A1 G gate A2 S source B1 D drain B2 S source Simplified outline 12 A B Transparent top view WLCSP4 (OLPMCM4401UPE) Graphic symbol D G S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name PMCM4401UPE WLCSP4 Description WLCSP4: wafer level chip-size package; 4 bumps (2 x 2) Version OLPMCM4401UPE 7....