PMCM4401VNE
12V, N-channel Trench MOSFET
24 July 2015
Product data sheet
1. General description
N-channel enhancement ...
PMCM4401VNE
12V, N-channel Trench MOSFET
24 July 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage Ultra small package: 0.78 × 0.78 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit
- - 12 V
-8 -
8V
[1] - - 6 A
- 36 42 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMCM4401VNE
12V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
A1 G
gate
A2 S
source
B1 D
drain
B2 S
source
Simplified outline
12 A
B
Transparent top view
WLCSP4 (OLPMCM4401VNE)
Graphic symbol
D
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCM4401VNE
WLCSP4
Description
WLCSP4: wafer level chip-size package; 4 bumps (2 x 2)
Version OL-PMCM4401VNE
7. Marking
Tab...