PMCM6501VNE

PMCM6501VNE 12 V, N-channel Trench MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 3 A; Tj = 25 °C Min Typ Max Unit - - 12 V -8 - 8V [1] - - 9.6 A - 15 18 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMCM6501VNE 12 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description A1 G gate A2 S source B1 S source B2 S source C1 D drain C2 D drain Simplified outline 12 A B C Transparent top view WLCSP6 (OLPMCM6501VNE) Graphic symbol D G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMCM6501VNE WLCSP6 Description WLCSP6: wafer level chip-size package; 6 bumps (3 x 2) Ver...