PMCPB5530X

PMCPB5530X 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  Exposed drain pad for excellent thermal conduction 1.3 Applications  Charging switch for portable devices  DC-to-DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disc and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 3 A; Tj = 25 °C resistance - 26 34 mΩ TR2 (P-channel), Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C resistance - 55 70 mΩ TR1 (N-channel) VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 5.3 A Nexperia PMCPB5530X 20 V, complementary Trench MOSFET Table 1. Quick reference data …continued Symbol Parameter Conditions TR2 (P-channel) VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain curr...