PMDPB56XNEA

PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 19 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C Static characteristics (per transistor) RDSon drain-source on-state VGS = 4.5 V; ID = 3.1 A; Tj = 25 °C resistance Min Typ Max Unit -- -12 - [1] - - 30 V 12 V 3.1 A - 55 72 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2 Simplified outline 654 Graphic symbol D1 D2 78 G1 G2 12...