PMDPB58UPE

PMDPB58UPE 20 V dual P-channel Trench MOSFET 3 February 2016 Product data sheet 1. General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 2 kV ElectroStatic Discharge (ESD) protection 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s Static characteristics (per transistor) RDSon drain-source on-state VGS = -4.5 V; ID = -2 A; Tj = 25 °C resistance Min Typ Max Unit -- -8 - [1] - - -20 V 8V -4.5 A - 58 67 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMDPB58UPE 20 V dual P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2 Simplified outline 654 Graphic symbol D1 D2 78 123 Transparent top view DFN2020-6 (SOT1118) G1 G2 S1 S2 017aaa260 6. Ordering information Table 3. Ordering inf...