PMDPB70XP
30 V, dual P-channel Trench MOSFET
Rev. 1 — 9 March 2012
Product data sheet
1. Product profile
1.1 General ...
PMDPB70XP
30 V, dual P-channel Trench MOSFET
Rev. 1 — 9 March 2012
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect
Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
1.3 Applications
Charging switch for portable devices DC/DC converters Small brushless DC motor drive
Power management in battery-driven portables
Hard disc and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
Per
transistor
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics (per
transistor)
Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
--
-12 -
[1] -
-
-30 12 -3.8
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.9 A; Tj = 25 °C resistance
- 70 87
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit
V V A
mΩ
Nexperia
PMDPB70XP
30 V, dual P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8
Pinning information Symbol Description S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1 D1 drain TR1 D2 drain TR2
3...